 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI4835BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.030 @ VGS = - 4.5 V - 7.5 FEATURES ID (A) - 9.6 rDS(on) (W) 0.018 @ VGS = - 10 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs S SO-8 S S S G 1 2 3 4 Top View P-Channel MOSFET Ordering Information: SI4835BDY SI4835BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 2.1 2.5 1.6 - 55 to 150 - 7.7 - 50 - 1.3 1.5 0.9 W _C - 5.9 A Symbol VDS VGS 10 secs Steady State - 30 "25 Unit V - 9.6 - 7.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72029 S-31062--Rev. C, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 39 70 18 Maximum 50 85 22 Unit _C/W C/W 1 SI4835BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "25 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 9.6 A VGS = - 4.5 V, ID = - 7.5 A VDS = - 15 V, ID = - 9.6 A IS = - 2.1 A, VGS = 0 V - 50 0.014 0.023 30 - 0.8 - 1.2 0.018 0.030 - 1.0 - 3.0 "100 -1 -5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 1.0 VDS = - 15 V, VGS = - 5 V, ID = - 9.6 A 25 6.5 12.5 2.9 15 13 60 45 45 4.9 25 20 100 70 80 ns W 37 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50 Transfer Characteristics TC = - 55_C 25_C 125_C 30 30 20 20 10 3V 0 0 1 2 3 4 5 6 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72029 S-31062--Rev. C, 26-May-03 SI4835BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 3200 Vishay Siliconix Capacitance C - Capacitance (pF) 0.04 2400 Ciss 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 1600 800 Crss 0.00 0 10 20 30 40 50 0 0 6 Coss 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9.6 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.6 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 20 30 40 50 1.2 4 1.0 2 0.8 0 0 10 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.05 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.04 ID = 9.6 A 0.03 I S - Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72029 S-31062--Rev. C, 26-May-03 www.vishay.com 3 SI4835BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 80 Single Pulse Power, Junction-to-Ambient 0.4 60 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 0.0 20 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc P(t) = 0.0001 1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72029 S-31062--Rev. C, 26-May-03 SI4835BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72029 S-31062--Rev. C, 26-May-03 www.vishay.com 5 |
Price & Availability of SI4835BDY
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |